具高靈敏度生物感測之矽锗奈米線於電漿處理技術應用之特性研究

Abstract

在近幾年來的研究上，奈米線被廣泛的研究與探討，尤其是在生物感測元件的應用上，被視為最具有潛力的元件之一。本實驗室的研究團隊已成功的製作出矽鍺奈米線，並經由實驗量測後，證實矽鍺奈米線有感測元件的特性。本論文中，我們利用半導體製程技術，製作出Ｐ型的矽鍺奈米線，再使用雙重電漿處理技術修補缺陷，最後經由氧化處理，使得矽鍺奈米線的鍺析出，成功的製作出非均質矽鍺奈米線。我們使用不同雙重電漿、不同電漿處理時間去做比較，最後找出具有最佳靈敏度的非均質矽鍺奈米線。因此本論文所研究出的矽鍺奈米線，能有效的應用在生物感測元件上。

Science on research in recent years, the nanowire was extensively studied and discussed, particularly in the application of bio-sensor devices, and is considered one of the most promising components for sensing devices. In our previous research, we successfully demonstrated the SiGe nanowire and by experimental measurement, we confirmed that is presented bio-sensor characteristic. In this thesis, p-type SiGe nanowires were fabricated, which is compatible to VLSI technology. Then we exploited dual plasma treatment in repairing defects. Next step, we oxidized SiGe nanowires to precipitate Ge, successfully fabricated non-homogeneous SiGe nonowires. We use the proportion of different dual plasma treatment, plasma treatment time to compare. Finally, we found non-homogeneous SiGe nanowires, which had the best sensitivity. In ours results, SiGe nanowires presented the better application in bio-sensor device.