完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yeh, WK | en_US |
dc.contributor.author | Chan, KY | en_US |
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Chen, MC | en_US |
dc.contributor.author | Lin, MS | en_US |
dc.date.accessioned | 2014-12-08T15:02:38Z | - |
dc.date.available | 2014-12-08T15:02:38Z | - |
dc.date.issued | 1996-06-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1281 | - |
dc.description.abstract | This work investigates the thermal stability of W-contacted p(+)n junction diodes, in which the tungsten contact was formed by selective chemical vapor deposition (CVD) or sputtering process. Reaction of Al and CVD-W at elevated temperature leads to the formation of WAl12, and the barrier capability of CVD-W film was dependent on the consumption of W. The sputter-W film has a columnar structure and contains a higher content of oxygen. The presence of oxygen retarded the formation of WAl12 and thus enhanced the thermal stability of the Al/W/Si structure. However, degradation of the Al/sputter-W (100 nm)/p(+)n diodes occurred after 30 min annealing at 550 degrees C, presumably due to Al diffusion along the grain boundary of sputter-W film. For the CVD-W contacted junction diodes, insertion of a thin TiN barrier layer between the Al and W film was effective in suppressing the formation of WAl12 and thus improved the device's thermal stability. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Thermal stability of W-contacted junction diodes | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 143 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 2053 | en_US |
dc.citation.epage | 2059 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
顯示於類別: | 期刊論文 |