標題: Thermal stability of Cu/NiSi-contacted p(+)n shallow junction
作者: Wang, CC
Lin, HH
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NiSi;Cu;shallow junction;thermal stability;Cu3Si
公開日期: 1-九月-2004
摘要: The thermal stability of Cu/NiSi-contacted p(+)n shallow junction diodes was investigated with respect to their electrical characteristics and metallurgical reactions. The TaN/Cu/NiSi/p(+)n junction diode remained intact after 30min thermal annealing at temperatures of up to 350degreesC. Upon annealing at 375degreesC, a marked increase in reverse bias leakage current occurred, and secondary ion mass spectrometry (SIMS) analysis indicated that Cu started to penetrate into the NiSi-contacted shallow junction region. After a higher temperature annealing at 425degreesC, a Cu3Si phase was formed. The failure of the TaN/ Cu/NiSi/p(+)n junction diodes is attributed to the penetration of Cu through the NiSi layer into the junction region, leading to junction degradation by introducing deep-level trap states and the eventual formation Of Cu3Si.
URI: http://dx.doi.org/10.1143/JJAP.43.5997
http://hdl.handle.net/11536/26393
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.5997
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 9A
起始頁: 5997
結束頁: 6000
顯示於類別:期刊論文


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