標題: | Thermal stability of Cu/NiSi-contacted p(+)n shallow junction |
作者: | Wang, CC Lin, HH Chen, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | NiSi;Cu;shallow junction;thermal stability;Cu3Si |
公開日期: | 1-九月-2004 |
摘要: | The thermal stability of Cu/NiSi-contacted p(+)n shallow junction diodes was investigated with respect to their electrical characteristics and metallurgical reactions. The TaN/Cu/NiSi/p(+)n junction diode remained intact after 30min thermal annealing at temperatures of up to 350degreesC. Upon annealing at 375degreesC, a marked increase in reverse bias leakage current occurred, and secondary ion mass spectrometry (SIMS) analysis indicated that Cu started to penetrate into the NiSi-contacted shallow junction region. After a higher temperature annealing at 425degreesC, a Cu3Si phase was formed. The failure of the TaN/ Cu/NiSi/p(+)n junction diodes is attributed to the penetration of Cu through the NiSi layer into the junction region, leading to junction degradation by introducing deep-level trap states and the eventual formation Of Cu3Si. |
URI: | http://dx.doi.org/10.1143/JJAP.43.5997 http://hdl.handle.net/11536/26393 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.43.5997 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 43 |
Issue: | 9A |
起始頁: | 5997 |
結束頁: | 6000 |
顯示於類別: | 期刊論文 |