完整後設資料紀錄
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dc.contributor.authorHuang, Ying-Shinen_US
dc.contributor.authorHu, Sheng-Yaoen_US
dc.contributor.authorLee, Yueh-Chienen_US
dc.contributor.authorChang, Chung-Chengen_US
dc.contributor.authorTiong, Kwong-Kauen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.date.accessioned2015-12-02T02:59:27Z-
dc.date.available2015-12-02T02:59:27Z-
dc.date.issued2015-11-15en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2015.07.188en_US
dc.identifier.urihttp://hdl.handle.net/11536/128208-
dc.description.abstractWe report the characteristics of reflectance spectra of the 15- and 20-period ZnTe/ZnSe distributed Bragg reflector grown on GaAs (001) substrates by molecular beam epitaxy. The reflectance spectra measured at various incident angles and polarizations were investigated by the theoretical curves simulated using transfer matrix method. The wavelength variation of the refractive indices described by Sellmeier equation and random thickness model were also considered for the interpretation of the experimentally observed curves. An omnidirectional reflection range defined from the edge of incident-angle-dependent reflection band with TE and TM polarizations is about 15 nm, and is consistent with the observed experimental curves. The results showed that the selected ZnTe and ZnSe materials are suitable for constructing multilayer structures having omnidirectional reflection band. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnTeen_US
dc.subjectZnSeen_US
dc.subjectDistributed Bragg reflectorsen_US
dc.subjectReflectanceen_US
dc.subjectMolecular beam epitaxyen_US
dc.titleInvestigation of omnidirectional reflection band in ZnTe/ZnSe distributed Bragg reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2015.07.188en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume649en_US
dc.citation.spage755en_US
dc.citation.epage759en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000361159000103en_US
dc.citation.woscount0en_US
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