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dc.contributor.authorKruchinin, V. N.en_US
dc.contributor.authorAliev, V. Sh.en_US
dc.contributor.authorPerevaIov, T. V.en_US
dc.contributor.authorIslamov, D. R.en_US
dc.contributor.authorGritsenko, V. A.en_US
dc.contributor.authorProsvirin, I. P.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, A.en_US
dc.date.accessioned2015-12-02T02:59:27Z-
dc.date.available2015-12-02T02:59:27Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2015.04.091en_US
dc.identifier.urihttp://hdl.handle.net/11536/128214-
dc.description.abstractWe study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanoscale fluctuationsen_US
dc.subjectHafnium sub-oxidesen_US
dc.subjectPercolationen_US
dc.subjectResistive memoryen_US
dc.titleNanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAMen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2015.04.091en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume147en_US
dc.citation.spage165en_US
dc.citation.epage167en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000362308000040en_US
dc.citation.woscount0en_US
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