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dc.contributor.authorHsu, C. C.en_US
dc.contributor.authorChou, C. H.en_US
dc.contributor.authorWang, S. Y.en_US
dc.contributor.authorChi, W. C.en_US
dc.contributor.authorChien, C. H.en_US
dc.contributor.authorLuo, G. L.en_US
dc.date.accessioned2015-12-02T02:59:30Z-
dc.date.available2015-12-02T02:59:30Z-
dc.date.issued2015-09-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4931133en_US
dc.identifier.urihttp://hdl.handle.net/11536/128277-
dc.description.abstractIn this study, we developed an Ohmic contact structure to an in situ n(+)-Ge film that has an ultralow specific contact resistivity of [(6.8 +/- 2.1) x 10(-8) Omega.cm(2)]. This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device. (C) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleFabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metalen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4931133en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume107en_US
dc.citation.issue11en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000361639200052en_US
dc.citation.woscount0en_US
Appears in Collections:Articles