標題: | Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal |
作者: | Hsu, C. C. Chou, C. H. Wang, S. Y. Chi, W. C. Chien, C. H. Luo, G. L. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 14-Sep-2015 |
摘要: | In this study, we developed an Ohmic contact structure to an in situ n(+)-Ge film that has an ultralow specific contact resistivity of [(6.8 +/- 2.1) x 10(-8) Omega.cm(2)]. This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device. (C) 2015 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4931133 http://hdl.handle.net/11536/128277 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4931133 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 107 |
Issue: | 11 |
Appears in Collections: | Articles |