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dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYou, Boen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorLo, Wen-Hungen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorLiu, Kuan-Juen_US
dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorWu, Jamesen_US
dc.contributor.authorTsai, Wei-Kungen_US
dc.contributor.authorChenge, Kuo-Yuen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.date.accessioned2015-12-02T02:59:33Z-
dc.date.available2015-12-02T02:59:33Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0041510ssIen_US
dc.identifier.urihttp://hdl.handle.net/11536/128343-
dc.description.abstractThis paper introduces a method to determine the located region of trap position by the analysis of three-level random telegraph signal (RTS) in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect-transistors. For the cases of two traps, the average time at the 2nd level ((12)) is composed of average emission time of one trap and average capture time of the other. Comparison and analysis of (tau(2)) curves varying with gate voltage in RTS measurements with and without interchanged source/drain can clarify the located regions of the two traps. Moreover, the simplified equations are also considered and used to confirm the trap positions. (C) 2015 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleA Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0041510ssIen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.issue10en_US
dc.citation.spageQ47en_US
dc.citation.epageQ49en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000361272100006en_US
dc.citation.woscount0en_US
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