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dc.contributor.authorTsai, LNen_US
dc.contributor.authorCheng, YTen_US
dc.contributor.authorHsu, WSen_US
dc.contributor.authorFang, WLen_US
dc.date.accessioned2014-12-08T15:17:41Z-
dc.date.available2014-12-08T15:17:41Z-
dc.date.issued2006-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2161222en_US
dc.identifier.urihttp://hdl.handle.net/11536/12835-
dc.description.abstractThis article presents a novel fabrication process to enhance the operational performance and reliability of electrothermal microactuators. Carbon nanotubes (CNTs) (outer diameter: 10-20 nm, innerdiameter: 5-10 nm, length: 0.5-200 mu m) are incorporated in an electrolytic nickel deposition process in which a well-dispersed Ni-CNTs colloidal solution is made by a special acid oxidative method to synthesis a Ni-CNTs nanocomposite for device fabrication. Measurement results show that the microactuator plated with CNTs (0.028 g/L) needs the power requirement less 95% than the pure nickel device at the same output displacement of 3 mu m. The performance improvement of the electrothermal microactuator made of the nanocomposite, including device strength and power efficiency, has shown to be similar to the Ni-diamond composites (L. N. Tsai, G. R. Shen, Y. T. Cheng, and W. S. Hsu, The 54th Electronic Components and Technology Conference, June 2004, pp. 472-476)). In addition, the E/p ratio of the Ni-CNTs composite can be enhanced to 1.47 times higher than that of pure nickel, which is a fascinating result for resonant device fabrication. (c) 2006 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleNi-carbon nanotubes nanocomposite for robust microelectromechanical systems fabricationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2161222en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume24en_US
dc.citation.issue1en_US
dc.citation.spage205en_US
dc.citation.epage210en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000235845900036-
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