完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, LN | en_US |
dc.contributor.author | Cheng, YT | en_US |
dc.contributor.author | Hsu, WS | en_US |
dc.contributor.author | Fang, WL | en_US |
dc.date.accessioned | 2014-12-08T15:17:41Z | - |
dc.date.available | 2014-12-08T15:17:41Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.2161222 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12835 | - |
dc.description.abstract | This article presents a novel fabrication process to enhance the operational performance and reliability of electrothermal microactuators. Carbon nanotubes (CNTs) (outer diameter: 10-20 nm, innerdiameter: 5-10 nm, length: 0.5-200 mu m) are incorporated in an electrolytic nickel deposition process in which a well-dispersed Ni-CNTs colloidal solution is made by a special acid oxidative method to synthesis a Ni-CNTs nanocomposite for device fabrication. Measurement results show that the microactuator plated with CNTs (0.028 g/L) needs the power requirement less 95% than the pure nickel device at the same output displacement of 3 mu m. The performance improvement of the electrothermal microactuator made of the nanocomposite, including device strength and power efficiency, has shown to be similar to the Ni-diamond composites (L. N. Tsai, G. R. Shen, Y. T. Cheng, and W. S. Hsu, The 54th Electronic Components and Technology Conference, June 2004, pp. 472-476)). In addition, the E/p ratio of the Ni-CNTs composite can be enhanced to 1.47 times higher than that of pure nickel, which is a fascinating result for resonant device fabrication. (c) 2006 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ni-carbon nanotubes nanocomposite for robust microelectromechanical systems fabrication | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1116/1.2161222 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 205 | en_US |
dc.citation.epage | 210 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000235845900036 | - |
顯示於類別: | 會議論文 |