標題: | Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment |
作者: | Chen, Ji Chang, Kuan-Chang Chang, Ting-Chang Tsai, Tsung-Ming Pan, Chih-Hung Zhang, Rui Lou, Jen-Chung Chu, Tian-Jian Wu, Cheng-Hsien Chen, Min-Chen Hung, Ya-Chi Syu, Yong-En Zheng, Jin-Cheng Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | RRAM;nitrogen buffering effect;electric field force;NH3 treatment |
公開日期: | 1-十一月-2015 |
摘要: | In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance. |
URI: | http://dx.doi.org/10.1109/LED.2015.2477163 http://hdl.handle.net/11536/128378 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2015.2477163 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 36 |
Issue: | 11 |
起始頁: | 1138 |
結束頁: | 1141 |
顯示於類別: | 期刊論文 |