標題: Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
作者: Chen, Ji
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Zhang, Rui
Lou, Jen-Chung
Chu, Tian-Jian
Wu, Cheng-Hsien
Chen, Min-Chen
Hung, Ya-Chi
Syu, Yong-En
Zheng, Jin-Cheng
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;nitrogen buffering effect;electric field force;NH3 treatment
公開日期: 1-十一月-2015
摘要: In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
URI: http://dx.doi.org/10.1109/LED.2015.2477163
http://hdl.handle.net/11536/128378
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2477163
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
Issue: 11
起始頁: 1138
結束頁: 1141
顯示於類別:期刊論文