標題: Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
作者: Tsai, Tsung-Ling
Chang, Hsiang-Yu
Jiang, Fa-Shen
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CBRAM;OxRRAM;oxygen vacancies
公開日期: 1-十一月-2015
摘要: In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum, which is attributed to a considerable amount of oxygen vacancies created in the switching layer. However, the substantial improvement in device performance, such as stable switching, high switching cycles, decreased set/reset voltages, and near-100% device yield, were obtained in the CBRAM devices during the post-HfO2 deposition annealing in vacuum.
URI: http://dx.doi.org/10.1109/LED.2015.2477491
http://hdl.handle.net/11536/128379
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2477491
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
Issue: 11
起始頁: 1146
結束頁: 1148
顯示於類別:期刊論文