標題: | Impact of Post Deposition Annealing on Resistive Switching in Ga2O3-Based Conductive-Bridge RAM Devices |
作者: | Gan, Kai-jhih Liu, Po-Tsun Chien, Ta-Chun Ruan, Dun-Bao Chiu, Yu-Chuan Sze, Simon M. 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | Ga2O3;CBRAM;Annealing |
公開日期: | 1-一月-2018 |
摘要: | We study the influence of post-deposition annealing on the electrical properties of performance of Ga2O3-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga2O3) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post-Ga2O3 deposition annealing in pure nitrogen (N-2) ambient. |
URI: | http://hdl.handle.net/11536/146242 |
ISSN: | 2378-8593 |
期刊: | 2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) |
起始頁: | 281 |
結束頁: | 282 |
顯示於類別: | 會議論文 |