標題: Impact of Post Deposition Annealing on Resistive Switching in Ga2O3-Based Conductive-Bridge RAM Devices
作者: Gan, Kai-jhih
Liu, Po-Tsun
Chien, Ta-Chun
Ruan, Dun-Bao
Chiu, Yu-Chuan
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Ga2O3;CBRAM;Annealing
公開日期: 1-Jan-2018
摘要: We study the influence of post-deposition annealing on the electrical properties of performance of Ga2O3-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga2O3) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post-Ga2O3 deposition annealing in pure nitrogen (N-2) ambient.
URI: http://hdl.handle.net/11536/146242
ISSN: 2378-8593
期刊: 2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)
起始頁: 281
結束頁: 282
Appears in Collections:Conferences Paper