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dc.contributor.authorKumar, Malkundi Puttaveerappa Vijayen_US
dc.contributor.authorHu, Chia-Yingen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2015-12-02T02:59:37Z-
dc.date.available2015-12-02T02:59:37Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2015.2471797en_US
dc.identifier.urihttp://hdl.handle.net/11536/128382-
dc.description.abstractThis paper presents the impacts of an advanced shell doping profile (SDP) on the electrical characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS), and ON-current by a numerical simulator. Due to the potential mirroring effect, a special observation stemming from the SDP, the carriers can enter the intrinsic region from the doped surface reducing the series resistance though the junction depth is smaller than 5 nm. The proposed doping profile provides an additional structure parameter for designing a JL FET showing the mitigated short-channel effects, a better SS, and a higher ON/OFF current ratio for sub-20-nm channel length. Compared with traditional devices, a JL FET with the proposed SDP shows a lower OFF-current by decades and less electrical characteristics variation caused by the nanowire diameter variation. The SDP not only reduces the series resistance of a JL FET but also poses a possible solution of avoiding the negative impacts of quantum confinement for advanced technology nodes.en_US
dc.language.isoen_USen_US
dc.subjectJunctionless (JL) FETen_US
dc.subjectshell doping profile (SDP)en_US
dc.titleImpacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2015.2471797en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume62en_US
dc.citation.issue11en_US
dc.citation.spage3541en_US
dc.citation.epage3546en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000364242000013en_US
dc.citation.woscount0en_US
Appears in Collections:Articles