完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kumar, Malkundi Puttaveerappa Vijay | en_US |
dc.contributor.author | Hu, Chia-Ying | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.date.accessioned | 2015-12-02T02:59:37Z | - |
dc.date.available | 2015-12-02T02:59:37Z | - |
dc.date.issued | 2015-11-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2015.2471797 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128382 | - |
dc.description.abstract | This paper presents the impacts of an advanced shell doping profile (SDP) on the electrical characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS), and ON-current by a numerical simulator. Due to the potential mirroring effect, a special observation stemming from the SDP, the carriers can enter the intrinsic region from the doped surface reducing the series resistance though the junction depth is smaller than 5 nm. The proposed doping profile provides an additional structure parameter for designing a JL FET showing the mitigated short-channel effects, a better SS, and a higher ON/OFF current ratio for sub-20-nm channel length. Compared with traditional devices, a JL FET with the proposed SDP shows a lower OFF-current by decades and less electrical characteristics variation caused by the nanowire diameter variation. The SDP not only reduces the series resistance of a JL FET but also poses a possible solution of avoiding the negative impacts of quantum confinement for advanced technology nodes. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Junctionless (JL) FET | en_US |
dc.subject | shell doping profile (SDP) | en_US |
dc.title | Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2015.2471797 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 62 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 3541 | en_US |
dc.citation.epage | 3546 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000364242000013 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |