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dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.date.accessioned2015-12-02T02:59:41Z-
dc.date.available2015-12-02T02:59:41Z-
dc.date.issued2015-09-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2015.09.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/128439-
dc.description.abstractIn situ aluminum-doped ZnO (AZO) films were grown on glass substrates by atomic layer deposition (AID) with an interrupted flow at temperatures in range 200-280 degrees C; the optimal temperature, 260 degrees C, depended on the electrical properties. To assess the effect of the ratio of pulses of diethylzinc (DEZn) and trimethylaluminium (TMA) on the structural, optical and electrical properties, we grew AZO films with various pulse ratios of DEZn:TMA in a range from 3:1 to 10:1 at 260 degrees C. These properties and the content of Al were investigated with X-ray diffraction, X-ray reflectivity (XRR), a high-resolution transmission electron microscope (HRTEM), a secondary-ion mass spectrometer (SIMS), transmission spectra, Hall measurements and X-ray photoelectron spectra (XPS). The electrical resistivity was least, 5.7 x 10(-4) Omega cm, for ALD-AZO films with pulse ratio 6:1; the carrier mobility was 8.80 cm(2) V-1 s(-1) and optical transmittance up to 94%. The epitaxial AZO films grown in situ also on m-plane sapphire exhibited the two-fold symmetry of ZnO (110) in the orthorhombic crystal system. All results show that a novel in situ doping method with an interrupted flow controls the Al content of AZO films more easily, and is more usefully applicable for a structure with a large aspect ratio for an advanced photoelectric device. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThin filmsen_US
dc.subjectX-ray scatteringen_US
dc.subjectElectrical conductivityen_US
dc.subjectHall effecten_US
dc.titleIn situ Al-doped ZnO films by atomic layer deposition with an interrupted flowen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchemphys.2015.09.024en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume165en_US
dc.citation.spage245en_US
dc.citation.epage252en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000363818500033en_US
dc.citation.woscount0en_US
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