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dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chin-Chunen_US
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorWang, Chia-Lingen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2015-12-02T03:00:50Z-
dc.date.available2015-12-02T03:00:50Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-1523-1en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/128477-
dc.description.abstractA low-power sub-harmonic direct-down receiver is demonstrated using 0.18 mu m CMOS technology. The dynamic range of the receiver is increased by incorporating voltage gain controls with wide tuning range at RF and IF stages. For the flicker noise problem, vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are employed as the mixer switching core and at the input stage of the subsequent IF VGA. As a result, this work achieves a 45 dB gain from 5-6 GHz with 6 dB noise floor. The total current consumption is 5.5 mA at 1.8 V supply voltage.en_US
dc.language.isoen_USen_US
dc.subjectLow poweren_US
dc.subjectlow flicker noiseen_US
dc.subjectdirect-conversion receiveren_US
dc.subject8-phase signal generatoren_US
dc.subjectsub-harmonic mixeren_US
dc.subjectdeep n-well vertical-NPN bipolar junction transistoren_US
dc.title9.9-mA 5-6 GHz CMOS Sub-Harmonic Direct-Conversion Receiver Using Deep N-Well BJTen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF)en_US
dc.citation.spage47en_US
dc.citation.epage49en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000356592800015en_US
dc.citation.woscount0en_US
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