Anisotropic Structure Induced Electrical Properties of A-plane InN

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DC 欄位	值	語言
dc.contributor.author	Chang, P. -H.	en_US
dc.contributor.author	Chia, J. -W.	en_US
dc.contributor.author	Gwo, S.	en_US
dc.contributor.author	Ahn, H.	en_US
dc.date.accessioned	2015-12-02T03:00:51Z	-
dc.date.available	2015-12-02T03:00:51Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-55752-973-2	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128488	-
dc.description.abstract	Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.	en_US
dc.language.iso	en_US	en_US
dc.title	Anisotropic Structure Induced Electrical Properties of A-plane InN	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000355262503320	en_US
dc.citation.woscount	0	en_US
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