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dc.contributor.authorChang, P. -H.en_US
dc.contributor.authorChia, J. -W.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.authorAhn, H.en_US
dc.date.accessioned2015-12-02T03:00:51Z-
dc.date.available2015-12-02T03:00:51Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/128488-
dc.description.abstractTerahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic Structure Induced Electrical Properties of A-plane InNen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000355262503320en_US
dc.citation.woscount0en_US
顯示於類別:會議論文