标题: Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate
作者: Peng, WC
Wu, YS
材料科学与工程学系
Department of Materials Science and Engineering
关键字: glue bonding;InGaN-GaN;laser liftoff;light-emitting diodes (LEDs)
公开日期: 1-一月-2006
摘要: Vertical InGaN-GaN light-emitting diodes (LEDs) epitaxial films were successfully fabricated on a 50-mm Si substrate using glue bonding and laser liftoff technology. A high-temperature stable organic film, rather than a solder metal, was used as the bonding agent. It was found that the light output of the vertical InGaN LED chip exceeded that of the conventional sapphire-substrate LEDs by about 20% at an injection current of 20 mA. The vertical InGaN LEDs operated at a much higher injection forward current (280 mA) than sapphire-substrate LEDs (180 mA). The radiation pattern of the vertical InGaN LEDs is more symmetrical than that of the sapphire-substrate LEDs. Furthermore, the vertical InGaN LEDs remain highly reliable after 1000 h of testing.
URI: http://dx.doi.org/10.1109/LPT.2006.870190
http://hdl.handle.net/11536/12848
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.870190
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 1-4
起始页: 613
结束页: 615
显示于类别:Articles


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