标题: | Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate |
作者: | Peng, WC Wu, YS 材料科学与工程学系 Department of Materials Science and Engineering |
关键字: | glue bonding;InGaN-GaN;laser liftoff;light-emitting diodes (LEDs) |
公开日期: | 1-一月-2006 |
摘要: | Vertical InGaN-GaN light-emitting diodes (LEDs) epitaxial films were successfully fabricated on a 50-mm Si substrate using glue bonding and laser liftoff technology. A high-temperature stable organic film, rather than a solder metal, was used as the bonding agent. It was found that the light output of the vertical InGaN LED chip exceeded that of the conventional sapphire-substrate LEDs by about 20% at an injection current of 20 mA. The vertical InGaN LEDs operated at a much higher injection forward current (280 mA) than sapphire-substrate LEDs (180 mA). The radiation pattern of the vertical InGaN LEDs is more symmetrical than that of the sapphire-substrate LEDs. Furthermore, the vertical InGaN LEDs remain highly reliable after 1000 h of testing. |
URI: | http://dx.doi.org/10.1109/LPT.2006.870190 http://hdl.handle.net/11536/12848 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2006.870190 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 18 |
Issue: | 1-4 |
起始页: | 613 |
结束页: | 615 |
显示于类别: | Articles |
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