Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping

Abstract

AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by. the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7% (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs.