標題: Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping
作者: Lee, Yea-Chen
Lee, Chia-En
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: alGaInP-based light-emitting diodes (LEDs);geometric sapphire shaping light-emitting diodes (GSS-LEDs);glue bonding (GB);sapphire chemical wet etching
公開日期: 1-Mar-2008
摘要: AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by. the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7% (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs.
URI: http://dx.doi.org/10.1109/LPT.2008.916905
http://hdl.handle.net/11536/9629
ISSN: 1041-1135
DOI: 10.1109/LPT.2008.916905
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 20
Issue: 5-8
起始頁: 369
結束頁: 371
Appears in Collections:Articles


Files in This Item:

  1. 000257952800015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.