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| The Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes | 8 |
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| The Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes | 8 |
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| 美國 | 4 |
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| Menlo Park | 4 |
| Beijing | 1 |