Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, K. S.	en_US
dc.contributor.author	Chang, C. C.	en_US
dc.contributor.author	Lin, W. H.	en_US
dc.contributor.author	Shih, M. H.	en_US
dc.contributor.author	Lin, S. Y.	en_US
dc.contributor.author	Chang, Y. C.	en_US
dc.date.accessioned	2015-12-02T03:00:51Z	-
dc.date.available	2015-12-02T03:00:51Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-55752-973-2	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128498	-
dc.description.abstract	Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1 mu m was achieved and longer photon lifetime from type II structure also observed. (C) 2013 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000355262504025	en_US
dc.citation.woscount	0	en_US
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