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dc.contributor.authorKao, Ming-Hsuanen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLee, Ching-Tingen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2015-12-02T03:00:51Z-
dc.date.available2015-12-02T03:00:51Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/128500-
dc.description.abstractHigh Near-IR response photo-diode (0.1A/W@800nm) and high efficiency a-Si/a-SiGe tandem solar cell (8.38%) were demonstrated using high-density plasma-fabricated a-SiGe:H deposition technology with Si2H6 and GeH4 precursor. The low temperature (140 degrees C) a-SiGe: H films with low defect density (2.3x10(16)cm(-3)) are suitable for the applications of flexible solar self-powered multi-functional panel and 3D stacked monolithic devices.en_US
dc.language.isoen_USen_US
dc.titleLow Temperature a-SiGe:H Near-IR Sensor and Photovoltaic Devices for Flexible Multi-functional Panelen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000355262501064en_US
dc.citation.woscount0en_US
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