完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kao, Ming-Hsuan | en_US |
dc.contributor.author | Shieh, Jia-Min | en_US |
dc.contributor.author | Shen, Chang-Hong | en_US |
dc.contributor.author | Yu, Peichen | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Lee, Ching-Ting | en_US |
dc.contributor.author | Yang, Fu-Liang | en_US |
dc.date.accessioned | 2015-12-02T03:00:51Z | - |
dc.date.available | 2015-12-02T03:00:51Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.isbn | 978-1-55752-973-2 | en_US |
dc.identifier.issn | 2160-9020 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128500 | - |
dc.description.abstract | High Near-IR response photo-diode (0.1A/W@800nm) and high efficiency a-Si/a-SiGe tandem solar cell (8.38%) were demonstrated using high-density plasma-fabricated a-SiGe:H deposition technology with Si2H6 and GeH4 precursor. The low temperature (140 degrees C) a-SiGe: H films with low defect density (2.3x10(16)cm(-3)) are suitable for the applications of flexible solar self-powered multi-functional panel and 3D stacked monolithic devices. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Low Temperature a-SiGe:H Near-IR Sensor and Photovoltaic Devices for Flexible Multi-functional Panel | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000355262501064 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |