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dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorHsu, Shih-Chiehen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2015-12-02T03:00:52Z-
dc.date.available2015-12-02T03:00:52Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/128502-
dc.description.abstractThe high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2x10(9) to 1x10(8) cm(2). The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20mA due to the high quality thin GaN and excellent heating dissipation.en_US
dc.language.isoen_USen_US
dc.titleA Study of Mechanical Lift-Off Technology for High-Efficiency Vertical LEDs Using Micro-Porous GaN Templateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000355262501052en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper