完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Sheng-Wen | en_US |
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Lee, Chia-Yu | en_US |
dc.contributor.author | Liu, Che-Yu | en_US |
dc.contributor.author | Lan, Yu-Pin | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.date.accessioned | 2015-12-02T03:00:52Z | - |
dc.date.available | 2015-12-02T03:00:52Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.isbn | 978-1-55752-973-2 | en_US |
dc.identifier.issn | 2160-9020 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128507 | - |
dc.description.abstract | In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000355262504246 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |