標題: | Investigation of Radiation Hardness of HfO2 Resistive Random Access Memory |
作者: | Tsui, Bing-Yue Chang, Ko-Chin Shew, Bor-Yuan Lee, Heng-Yuan Tsai, Ming-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2014 |
摘要: | Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array. |
URI: | http://hdl.handle.net/11536/128532 |
ISBN: | 978-1-4799-2217-8 |
ISSN: | |
期刊: | PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) |
顯示於類別: | 會議論文 |