標題: Investigation of Radiation Hardness of HfO2 Resistive Random Access Memory
作者: Tsui, Bing-Yue
Chang, Ko-Chin
Shew, Bor-Yuan
Lee, Heng-Yuan
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2014
摘要: Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.
URI: http://hdl.handle.net/11536/128532
ISBN: 978-1-4799-2217-8
ISSN: 
期刊: PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Appears in Collections:Conferences Paper