A High Efficiency Field Emitters Pt/Si-nanocones Array with Vertically Aligned Structure

Abstract

An effective method of fabricating vertically aligned silicon nanocones (Si-NCs) was realized by using the self-assembled silver (Ag) nanoislands as natural metal-nanomask during dry etching process. The obtained Si-NCs were preferentially aligned along the c-axis direction. To enhance the field emission property, thin platinum (Pt) films (similar to 20 nm) were subsequently deposited on the Si-NCs by sputter coater to form Pt/Si-NCs heterostructures. The turn-on field defined by the 1 mu A/cm(2) current density criterion is similar to 2.85 V/mu m. As measurements of field emission, the low turn-on field was attributed to the vertical one-dimensional nanostructures, and perhaps more importantly, proper density distribution of the Pt/Si-NCs. The suggesting an interesting alternative route for producing Si-NCs that might be useful for optical and electronic applications.