完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, Bo-Rongen_US
dc.contributor.authorTao, Nick G. M.en_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorHenderson, Timen_US
dc.contributor.authorLin, Barry J. F.en_US
dc.date.accessioned2015-12-02T03:00:57Z-
dc.date.available2015-12-02T03:00:57Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-2-87487-036-1en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/128584-
dc.description.abstractThe safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.en_US
dc.language.isoen_USen_US
dc.subjectHBTen_US
dc.subjectsafe operating areaen_US
dc.subjectTCADen_US
dc.subjectsimulationen_US
dc.title2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Areaen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000361635500001en_US
dc.citation.woscount0en_US
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