Analysis and Modeling of Skin and Proximity Effects for Millimeter-Wave Inductors Design in Nanoscale Si CMOS

Abstract

Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z(in)) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z(in)) and Q measured from mm-wave inductor (L-dc similar to 150pH, Q(max)similar to 17, f(SR)>> 65GHz) fabricated by 65nm CMOS process with 0.9 mu m standard top metal.