標題: Analytical Modeling of Proximity and Skin Effects for Millimeter-Wave Inductors Simulation and Design in Nano Si CMOS
作者: Chan, Ren -Jia
Guo, Jyh-Chyurn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Analytical model;proximity;skin;mm-wave inductor
公開日期: 1-Jan-2014
摘要: Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z(m)) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z(in)) and Q measured from mm-wave inductor (L(dc similar to)150pH, Q(max)similar to 17, f(SR)>> 65GHz) fabricated by 65nm CMOS process with 0.9 mu m standard top metal.
URI: http://hdl.handle.net/11536/128660
ISBN: 978-1-4799-3869-8
ISSN: 0149-645X
期刊: 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
Appears in Collections:Conferences Paper