標題: Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Points
作者: Chang, Wei-Ling
Meng, Chinchun
Syu, Jin-Siang
Wu, Yan-Feng
Huang, Guo-Wei
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Sub-harmonic;injection-locked;voltage controlled oscillator;Marchand balun;high-electron mobility transistors (HEMTs);GaAs
公開日期: 1-Jan-2014
摘要: A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.
URI: http://hdl.handle.net/11536/128661
ISBN: 978-1-4799-3869-8
ISSN: 0149-645X
期刊: 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
Appears in Collections:Conferences Paper