Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chien Chao-Hsin | en_US |
dc.contributor.author | Chung Cheng-Ting | en_US |
dc.contributor.author | Chen Che-Wei | en_US |
dc.date.accessioned | 2015-12-04T07:03:15Z | - |
dc.date.available | 2015-12-04T07:03:15Z | - |
dc.date.issued | 2015-10-08 | en_US |
dc.identifier.govdoc | H01L029/78 | zh_TW |
dc.identifier.govdoc | H01L029/45 | zh_TW |
dc.identifier.govdoc | H01L029/51 | zh_TW |
dc.identifier.govdoc | H01L029/49 | zh_TW |
dc.identifier.govdoc | H01L021/285 | zh_TW |
dc.identifier.govdoc | H01L029/16 | zh_TW |
dc.identifier.govdoc | H01L029/417 | zh_TW |
dc.identifier.govdoc | H01L029/423 | zh_TW |
dc.identifier.govdoc | H01L021/02 | zh_TW |
dc.identifier.govdoc | H01L029/66 | zh_TW |
dc.identifier.govdoc | H01L029/06 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/128695 | - |
dc.description.abstract | A semiconductor device and methods of formation are provided. The semiconductor device includes a first metal alloy over a first active region of a fin and a second metal alloy over a second active region of the fin. A conductive layer is over a channel region of the fin. A semiconductive layer is over the conductive layer. The conductive layer over the channel region suppresses current leakage and the semiconductive layer over the conductive layer reduces electro flux from a source to a drain, as compared to a channel region that does not have such a conductive layer or a semiconductive layer over a conductive layer. The semiconductor device having the first metal alloy as at least one of the source or drain requires a lower activation temperature than a semiconductor device that does not have a metal alloy as a source or a drain. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | SEMICONDUCTOR DEVICE AND FORMATION THEREOF | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20150287819 | zh_TW |
Appears in Collections: | Patents |
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