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dc.contributor.authorLu, Ting-Chouen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorKuo, Chung-Hungen_US
dc.contributor.authorLi, Chun-Huaien_US
dc.contributor.authorHsieh, Yao-Jenen_US
dc.contributor.authorLiu, Chun-Tingen_US
dc.date.accessioned2014-12-08T15:02:38Z-
dc.date.available2014-12-08T15:02:38Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2018-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/1286-
dc.description.abstractA bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mu m LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degrees C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.en_US
dc.language.isoen_USen_US
dc.titleDesign of Bandgap Voltage Reference Circuit with all TFT Devices on Glass Substrate in a 3-mu m UPS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage721en_US
dc.citation.epage724en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000262643900161-
Appears in Collections:Conferences Paper


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