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dc.contributor.author謝漢萍en_US
dc.contributor.author劉柏村en_US
dc.contributor.author蔡韻竹en_US
dc.contributor.author蔡旻諺en_US
dc.contributor.author鄧立峯en_US
dc.date.accessioned2015-12-04T07:03:28Z-
dc.date.available2015-12-04T07:03:28Z-
dc.date.issued2015-09-11en_US
dc.identifier.govdocH01L031/10zh_TW
dc.identifier.govdocH01L029/78zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/128776-
dc.description.abstract一種薄膜電晶體,包括:一透明基板:一閘極,該閘極設置於該透明基板上,其中該閘極之材料係由銦錫氧化物(ITO,Indium tin oxide)、銦鋅氧化物(IZO,indium zinc oxide),摻雜鋁之氧化鋅(AZO,Al-doped ZnO),銅(Cu),銀(Ag),鋁(Al)以及鉬(Mo)所組成之族群中所選出;一閘絕緣層,該閘絕緣層設置在該閘極上及該透明基板上,其中該閘絕緣層之材料係由氧化鉬鋅(Mo-Zn-O)以及氧化鋯鋅(ZrZnO)所組成之族群中所選出;一半導體主動層,該半導體主動層設置在該閘絕緣層上,其中該半導體主動層之材料係由氧化鋅(ZnO),氧化銦(In2 O3 ),ZTO,IGO,IZTO,AZTO以及HIZO所組成之族群中所選出;一電極層,該電極層設置在該半導體主動層上且曝露出部份該半導體主動層,其中該電極層之材料係由銦錫氧化物(ITO,Indium tin oxide),銦鋅氧化物(IZO,indium zinc oxide),摻雜鋁之氧化鋅(AZO,Al-doped ZnO),銅(Cu),銀(Ag),鋁(Al)以及鉬(Mo)所組成之族群中選出;以及一紫外光吸收層,設置在該半導體主動層上,其中該紫外光吸收層係由氧化鉬鋅(Mo-Zn-O)以及氧化鋯鋅(ZrZnO)所組成之族群中所選出。zh_TW
dc.language.isozh_TWen_US
dc.title具紫外光吸收層之薄膜電晶體zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI500179zh_TW
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