完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorTiwari, Rajanish N.en_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:17:44Z-
dc.date.available2014-12-08T15:17:44Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2008.10.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/12878-
dc.description.abstractPolycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectDiamond filmen_US
dc.subjectNitridesen_US
dc.subjectChemical vapor depositionen_US
dc.subjectInterface characterizationen_US
dc.subjectMorphologyen_US
dc.titleGrowth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2008.10.018en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume18en_US
dc.citation.issue2-3en_US
dc.citation.spage124en_US
dc.citation.epage127en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264429300006-
顯示於類別:會議論文


文件中的檔案:

  1. 000264429300006.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。