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dc.contributor.authorChao, TSen_US
dc.contributor.authorLin, YHen_US
dc.contributor.authorYang, WLen_US
dc.date.accessioned2014-12-08T15:17:45Z-
dc.date.available2014-12-08T15:17:45Z-
dc.date.issued2006-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.61en_US
dc.identifier.urihttp://hdl.handle.net/11536/12894-
dc.description.abstractIn this paper, n-type metal-oxide-semiconductor field-effect-transistors (nMOSFETs) of low donor-like interface traps are fabricated on hydrogen-annealed wafers (Hi-wafer) with an in-situ HF-vapor treatment. Gate oxide integrity is significantly improved in terms of drain current, transconductance, and threshold-voltage shift under stressing. We found the improvement is due to the significant reduction of donor-like interface trapping densities. This improvement becomes distinguished when both Hi-wafer and in-situ HF-vapor treatment are utilized.en_US
dc.language.isoen_USen_US
dc.subjectHi-waferen_US
dc.subjectHF-vaporen_US
dc.subjectnative oxideen_US
dc.subjecthydrogen-annealeden_US
dc.titleReduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.61en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue1Aen_US
dc.citation.spage61en_US
dc.citation.epage63en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000235150700014-
dc.citation.woscount0-
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