Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chao, TS | en_US |
dc.contributor.author | Lin, YH | en_US |
dc.contributor.author | Yang, WL | en_US |
dc.date.accessioned | 2014-12-08T15:17:45Z | - |
dc.date.available | 2014-12-08T15:17:45Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.61 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12894 | - |
dc.description.abstract | In this paper, n-type metal-oxide-semiconductor field-effect-transistors (nMOSFETs) of low donor-like interface traps are fabricated on hydrogen-annealed wafers (Hi-wafer) with an in-situ HF-vapor treatment. Gate oxide integrity is significantly improved in terms of drain current, transconductance, and threshold-voltage shift under stressing. We found the improvement is due to the significant reduction of donor-like interface trapping densities. This improvement becomes distinguished when both Hi-wafer and in-situ HF-vapor treatment are utilized. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Hi-wafer | en_US |
dc.subject | HF-vapor | en_US |
dc.subject | native oxide | en_US |
dc.subject | hydrogen-annealed | en_US |
dc.title | Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.45.61 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 1A | en_US |
dc.citation.spage | 61 | en_US |
dc.citation.epage | 63 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000235150700014 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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