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dc.contributor.authorWang, JPen_US
dc.contributor.authorLing, YCen_US
dc.contributor.authorLin, INen_US
dc.contributor.authorLin, WJen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:02:38Z-
dc.date.available2014-12-08T15:02:38Z-
dc.date.issued1996-05-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/1289-
dc.description.abstractInterdiffusion between layers in multilayer ferroelectric thin films was studied from their elemental depth profiles using secondary ion mass spectrometry. Among the films deposited on YBa2Cu3O7-x/CeO2/Si substrates, the interdiffusion is most pronounced for [Sr0.5Ba0.5]Nb2O6(SBN) films, less marked for Pb0.97La0.03(Zr1-xTix)(0.9925)O-3 (PLZT, x=0.54 or 0.34) films, and is least significant for BaTiO3 films. Higher substrate temperature used for growing SBN films is believed to be the main cause of interdiffusion. The larger proportion of cationic vacancies existing in PLZT films is another possible source inducing interdiffusion. Using YBa2Cu3O7-x/SrTiO3 as substrates substantially reduces the interdiffusion between layers. This is ascribed to the better crystallinity of the YBa2Cu3O7-x layers deposited on SrTiO3 substrates. These results indicate that both the characteristics of ferroelectric films and the underlying YBa2Cu3O7-x layers substantially modify the interdiffusion behavior between the layers. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleInterdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7-x as an intermediate layeren_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume79en_US
dc.citation.issue10en_US
dc.citation.spage7621en_US
dc.citation.epage7626en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1996UK22600022-
dc.citation.woscount3-
Appears in Collections:Articles