完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Wei-Chung | en_US |
dc.contributor.author | Chou, Ying-Wei | en_US |
dc.contributor.author | Chien, Meng-Wei | en_US |
dc.contributor.author | Chen, Hsin-Chieh | en_US |
dc.contributor.author | Yang, Shang-Hsien | en_US |
dc.contributor.author | Chen, Ke-Horng | en_US |
dc.contributor.author | Lin, Ying-Hsi | en_US |
dc.contributor.author | Lee, Chao-Cheng | en_US |
dc.contributor.author | Lin, Shian-Ru | en_US |
dc.contributor.author | Tsai, Tsung-Yen | en_US |
dc.date.accessioned | 2016-03-28T00:04:04Z | - |
dc.date.available | 2016-03-28T00:04:04Z | - |
dc.date.issued | 2016-04-01 | en_US |
dc.identifier.issn | 0885-8993 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TPEL.2015.2453511 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129320 | - |
dc.description.abstract | The dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over wide ranges of load currents for high-power universal serial bus devices. The silicon area of the embedded power management with the DBV technique in the system-on-a-chip can be effectively reduced to 50% of the conventional design with a P-type high-side power MOSFET. Test chips fabricated in 0.25-mu m CMOS process showed a 92% peak efficiency from 1 mA to 1 A. The maximum driving current was higher than 5 A, and the efficiencywas 88%. Compared with the efficiency of the converter without the DBV technique, the efficiency of the converter with DBV technique was improved by about 28%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Adjustable bootstrap capacitance (ABC) | en_US |
dc.subject | dual N-type MOSFETs | en_US |
dc.subject | dynamic bootstrap voltage (DBV) | en_US |
dc.subject | light-load efficiency | en_US |
dc.title | A Dynamic Bootstrap Voltage Technique for a High-Efficiency Buck Converter in a Universal Serial Bus Power Delivery Device | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TPEL.2015.2453511 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON POWER ELECTRONICS | en_US |
dc.citation.volume | 31 | en_US |
dc.citation.spage | 3002 | en_US |
dc.citation.epage | 3015 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:000365953100028 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |