完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, CCen_US
dc.contributor.authorLiao, HCen_US
dc.contributor.authorChen, SYen_US
dc.contributor.authorCheng, SYen_US
dc.date.accessioned2014-12-08T15:17:51Z-
dc.date.available2014-12-08T15:17:51Z-
dc.date.issued2006-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2163893en_US
dc.identifier.urihttp://hdl.handle.net/11536/12932-
dc.description.abstractWell-aligned ZnO nanorods grown on silicon substrates buffered with ZnO film were postannealed at 200-1000 degrees C in various atmospheres. The optical properties of ZnO nanorods were much improved by annealing at high temperatures in both atmospheres of N-2 and O-2. This improvement was ascribed to the decrease in structure defects as compared to as-grown ZnO nanorods. However, for the ZnO nanorods annealed in H-2/N-2, a stronger UV emission occurs at 600 degrees C; above that the UV emission rapidly disappeared, which was attributed to the collapse of the ZnO nanorods due to H-2 etching during a higher-temperature annealing in H-2/N-2. The crystallinity and optical properties of the ZnO nanorods can be controlled by postannealing treatment. (c) 2006 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleLuminescent and structural characteristics of ZnO nanorods fabricated by postannealingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2163893en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume24en_US
dc.citation.issue1en_US
dc.citation.spage304en_US
dc.citation.epage307en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000235845900055-
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