標題: | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
作者: | Luc, Quang Ho Do, Huy Binh Ha, Minh Thien Huu Hu, Chenming Calvin Lin, Yueh Chin Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | MOSCAP;AlN;HfO2;In0.53Ga0.47As;plasma enhanced atomic layer deposition;remote-plasma treatment |
公開日期: | 1-十二月-2015 |
摘要: | The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-k/III-V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In0.53Ga0.47As structure with the valence band offsets of 2.81 +/- 0.1 eV and the conduction band offsets of 1.9 +/- 0.1 eV was obtained. Better interface and optimized high-k dielectric qualities are achieved using post remote-plasma treatment with either N-2/H-2 or NH3 gases. Sub-nanometer equivalent oxide thickness HfO2/AlN/In0.53Ga0.47As MOSCAPs with low interface trap density and low leakage current density have been characterized. |
URI: | http://dx.doi.org/10.1109/LED.2015.2486771 http://hdl.handle.net/11536/129350 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2015.2486771 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 36 |
Issue: | 12 |
起始頁: | 1277 |
結束頁: | 1280 |
顯示於類別: | 期刊論文 |