標題: Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
作者: Luc, Quang Ho
Do, Huy Binh
Ha, Minh Thien Huu
Hu, Chenming Calvin
Lin, Yueh Chin
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSCAP;AlN;HfO2;In0.53Ga0.47As;plasma enhanced atomic layer deposition;remote-plasma treatment
公開日期: 1-十二月-2015
摘要: The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-k/III-V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In0.53Ga0.47As structure with the valence band offsets of 2.81 +/- 0.1 eV and the conduction band offsets of 1.9 +/- 0.1 eV was obtained. Better interface and optimized high-k dielectric qualities are achieved using post remote-plasma treatment with either N-2/H-2 or NH3 gases. Sub-nanometer equivalent oxide thickness HfO2/AlN/In0.53Ga0.47As MOSCAPs with low interface trap density and low leakage current density have been characterized.
URI: http://dx.doi.org/10.1109/LED.2015.2486771
http://hdl.handle.net/11536/129350
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2486771
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
Issue: 12
起始頁: 1277
結束頁: 1280
顯示於類別:期刊論文