標題: Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: anomalous Raman shifts and transistors with high ON/OFF ratio
作者: Wu, Chong-Rong
Chang, Xiang-Rui
Chang, Shu-Wei
Chang, Chung-En
Wu, Chao-Hsin
Lin, Shih-Yen
光電工程學系
Department of Photonics
關鍵字: 2D crystals;CVD;transistors
公開日期: 4-十一月-2015
摘要: We show that multilayer molybdenum disulfide (MoS2) grown with the chemical vapor deposition (CVD) may exhibit quite distinct behaviors of Raman shifts from those of exfoliated ones. The anomalous Raman shifts depend on CVD growth modes and are attributed to the modified dielectric screening and interlayer coupling of MoS2 in various growth conditions. With repeated CVD growths, we demonstrated the precise control over the layer number of MoS2. A decently large drain current, high ON/OFF ratio of 10(5), and enhanced field-effect mobility can be achieved in transistors fabricated on the six-layer MoS2.
URI: http://dx.doi.org/10.1088/0022-3727/48/43/435101
http://hdl.handle.net/11536/129386
ISSN: 0022-3727
DOI: 10.1088/0022-3727/48/43/435101
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 48
Issue: 43
顯示於類別:期刊論文