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dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorChen, Yen-Lunen_US
dc.contributor.authorChen, Chiang-Hsiaoen_US
dc.contributor.authorLiu, Pang-Shiuanen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2019-04-03T06:44:40Z-
dc.date.available2019-04-03T06:44:40Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttp://dx.doi.org/10.1038/ncomms9963en_US
dc.identifier.urihttp://hdl.handle.net/11536/129394-
dc.description.abstractA robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin-valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (similar to 10-20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.en_US
dc.language.isoen_USen_US
dc.titleOptically initialized robust valley-polarized holes in monolayer WSe2en_US
dc.typeArticleen_US
dc.identifier.doi10.1038/ncomms9963en_US
dc.identifier.journalNATURE COMMUNICATIONSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000366381900001en_US
dc.citation.woscount57en_US
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