完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Hsu, Wei-Ting | en_US |
dc.contributor.author | Chen, Yen-Lun | en_US |
dc.contributor.author | Chen, Chiang-Hsiao | en_US |
dc.contributor.author | Liu, Pang-Shiuan | en_US |
dc.contributor.author | Hou, Tuo-Hung | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.date.accessioned | 2019-04-03T06:44:40Z | - |
dc.date.available | 2019-04-03T06:44:40Z | - |
dc.date.issued | 2015-11-01 | en_US |
dc.identifier.issn | 2041-1723 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/ncomms9963 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129394 | - |
dc.description.abstract | A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin-valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (similar to 10-20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Optically initialized robust valley-polarized holes in monolayer WSe2 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/ncomms9963 | en_US |
dc.identifier.journal | NATURE COMMUNICATIONS | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000366381900001 | en_US |
dc.citation.woscount | 57 | en_US |
顯示於類別: | 期刊論文 |