完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChin, Aen_US
dc.contributor.authorLin, BCen_US
dc.date.accessioned2014-12-08T15:02:39Z-
dc.date.available2014-12-08T15:02:39Z-
dc.date.issued1996-05-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115575en_US
dc.identifier.urihttp://hdl.handle.net/11536/1293-
dc.description.abstractWe have investigated the growth of high quality In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.25Ga0.75As multiple quantum wells (MQWs) on 1 degrees misoriented (111)B and (100)GaAs substrates. Very narrow photoluminescence (PL) linewidths of 6.6 and 5.6 meV were measured in (100) and (111)B In0.12Ga0.88As/GaAs MQWs, respectively, which indicates the good optical quality of materials. In addition, more than an order of magnitude enhancement of PL intensity was measured from the (111)B sample relative to that from (100), which is consistent with the previously reported strongly enhanced optical property in (111)B AlGaAs/GaAs QW to (100). In contrast, under our normal growth conditions, narrow PL linewidth and large PL intensity were difficult to achieve in (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs. Two-step growth with a high AlGaAs growth temperature was used to improve the optical quality of (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs. A narrow PL linewidth of 5.1 meV and four times enhanced PL intensity can be obtained by such two-step growth. Cross-sectional transmission electron microscopy indicates defects generated in the 550 degrees C grown (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs, while such defects were reduced or disappeared at a high AlGaAs growth temperature of 620 degrees C. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleHigh optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.115575en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume68en_US
dc.citation.issue19en_US
dc.citation.spage2717en_US
dc.citation.epage2719en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UJ08900039-
dc.citation.woscount5-
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