標題: | Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs |
作者: | Chin, A Liao, CC Chu, J Li, SS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-五月-1997 |
摘要: | We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (3 1 1)A GaAs. The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical dark I-V characteristic at all the measured temperatures from 40 to 120 K. The strained p-type AlGaAs/InGaAs QWIP exhibits a slightly asymmetrical dark I-V characteristic, but is markedly less asymmetrical than that doped with beryllium. The slight asymmetry in dark I-V characteristic and the large blue-shift in responsivity spectra may be due to the thickness modulation observed from TEM and the red-shift of PL peak energy, where PL peak energies from (3 1 1)A AlGaAs/InGaAs multiple quantum wells are red-shifts of 7 and 22 meV to the side-by-side grown (1 0 0). |
URI: | http://dx.doi.org/10.1016/S0022-0248(96)00922-0 http://hdl.handle.net/11536/569 |
ISSN: | 0022-0248 |
DOI: | 10.1016/S0022-0248(96)00922-0 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 175 |
Issue: | |
起始頁: | 999 |
結束頁: | 1003 |
顯示於類別: | 會議論文 |