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dc.contributor.authorCheng, Yu-Wenen_US
dc.contributor.authorChen, Chao-Hsuanen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.date.accessioned2019-04-03T06:36:17Z-
dc.date.available2019-04-03T06:36:17Z-
dc.date.issued2015-10-01en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4935188en_US
dc.identifier.urihttp://hdl.handle.net/11536/129425-
dc.description.abstractA contact coating method is developed to cover the nano-channels with 100 nm or 200 nm diameter and 400 nm depth with a poly(4-vinylphenol) (PVP). In such coating the nano-channels faces downwards and its vertical position is controlled by a motor. The surface is first lowered to be in immediate contact with the polyvinylpyrrolidone (PVPY) water solution with concentration from 1 to 5 wt%, then pulled at the speed of 0.004 to 0.4 mm/s. By tuning the pulling speed and concentration we can realize conformal, filled, top-only, as well as floating film morphology. For a reproducible liquid detachment from the solid, the sample has a small tilt angle of 3 degree. Contact coating is used to cover the Al grid base of the vertical space-charge-limited transistor with PVPY. Poly(3-hexylthiophene-2,5-diyl) (P3HT) as the semiconductor. The transistor breakdown voltage is raised due to base coverage achieved by contact coating. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en_US
dc.language.isoen_USen_US
dc.titleOrganic transistors fabricated by contact coating at liquid-solid interface for nano-structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4935188en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume5en_US
dc.citation.issue10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000364228800046en_US
dc.citation.woscount0en_US
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