完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Yu-Wen | en_US |
dc.contributor.author | Chen, Chao-Hsuan | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Chao, Yu-Chiang | en_US |
dc.contributor.author | Horng, Sheng-Fu | en_US |
dc.date.accessioned | 2019-04-03T06:36:17Z | - |
dc.date.available | 2019-04-03T06:36:17Z | - |
dc.date.issued | 2015-10-01 | en_US |
dc.identifier.issn | 2158-3226 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4935188 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129425 | - |
dc.description.abstract | A contact coating method is developed to cover the nano-channels with 100 nm or 200 nm diameter and 400 nm depth with a poly(4-vinylphenol) (PVP). In such coating the nano-channels faces downwards and its vertical position is controlled by a motor. The surface is first lowered to be in immediate contact with the polyvinylpyrrolidone (PVPY) water solution with concentration from 1 to 5 wt%, then pulled at the speed of 0.004 to 0.4 mm/s. By tuning the pulling speed and concentration we can realize conformal, filled, top-only, as well as floating film morphology. For a reproducible liquid detachment from the solid, the sample has a small tilt angle of 3 degree. Contact coating is used to cover the Al grid base of the vertical space-charge-limited transistor with PVPY. Poly(3-hexylthiophene-2,5-diyl) (P3HT) as the semiconductor. The transistor breakdown voltage is raised due to base coverage achieved by contact coating. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Organic transistors fabricated by contact coating at liquid-solid interface for nano-structures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4935188 | en_US |
dc.identifier.journal | AIP ADVANCES | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000364228800046 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |