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dc.contributor.authorChao, TYen_US
dc.contributor.authorShen, GRen_US
dc.contributor.authorCheng, YTen_US
dc.date.accessioned2014-12-08T15:17:51Z-
dc.date.available2014-12-08T15:17:51Z-
dc.date.issued2006en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/12942-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2133324en_US
dc.description.abstractNi-P-diamond and Ni-P carbon nanotube (CNT) nanocomposite films have been synthesized and compared in this paper. Because diamond has different shapes and sizes than CNTs, the nanocomposite films exhibit distinct characteristics. Nanoindentation measurements show that the Young's modulus and hardness of the Ni-P-CNT nanocomposite film electroplated in a bath with 0.028 g/L CNTs increase to 665.9 +/- 29.5 GPa and 28.9 +/- 4.22 GPa, respectively, which is about four times larger than that of pure nickel. On the contrary, the modulus and hardness of the Ni-P-diamond nanocomposite films decrease with the incorporation of the nanodiamond powders due to the formation of voids and cracks, even though both diamond and CNTs have similar Young's modulus and hardness. For the Ni-P-diamond film plated in the bath with 2.0 g/ L nanodiamonds, the values are reduced to 110.5 +/- 4.3 and 2.3 +/- 0.1 GPa. Nevertheless, the electrothermal actuators made of both Ni-P-CNT and Ni-P-diamond composites can provide four times the maximum elongation, larger than that made of pure nickel. With the same displacement, the input power of the nanocomposite actuators is much less than that of the pure Ni one. This study reveals potential applications for nano/microelectromechanical systems fabrication using both Ni-P-diamond and Ni-P-CNT nanocomposites due to their distinctive physical properties and compatibility with contemporary complementary metal oxide semiconductor manufacturing processes. (c) 2005 The Electrochemical Society. [DOI: 10.1149/ 1.2133324] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleComparative study of Ni-P-diamond and Ni-P-CNT nanocomposite filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2133324en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume153en_US
dc.citation.issue1en_US
dc.citation.spageG98en_US
dc.citation.epageG104en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000234142400076-
dc.citation.woscount6-
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