標題: An integrated cobalt disulfide (CoS2) co-catalyst passivation layer on silicon microwires for photoelectrochemical hydrogen evolution
作者: Chen, Chih-Jung
Chen, Po-Tzu
Basu, Mrinmoyee
Yang, Kai-Chih
Lu, Ying-Rui
Dong, Chung-Li
Ma, Chong-Geng
Shen, Chin-Chang
Hu, Shu-Fen
Liu, Ru-Shi
加速器光源科技與應用學位學程
Master and Ph.D. Program for Science and Technology of Accelrrator Light Source
公開日期: 1-一月-2015
摘要: An integrated cobalt disulfide (CoS2) co-catalyst passivation layer on Si microwires (MWs) was used as a photocathode for solar hydrogen evolution. Si MWs were prepared by photolithography and dry etching techniques. The CoS2Si photocathodes were subsequently prepared by chemical deposition and thermal sulfidation of the Co(OH)(2) outer shell. The optimized onset potential and photocurrent of the CoS2Si electrode were 0.248 V and -3.22 mA cm(-2) (at 0 V), respectively. The best photocatalytic activity of the CoS2Si electrode resulted from lower charge transfer resistances among the photoabsorber, co-catalyst, and redox couples in the electrolyte. X-ray absorption near edge structure was conducted to investigate the unoccupied electronic states of the CoS2 layer. We propose that more vacancies in the S-3p unoccupied states of the CoS2Si electrode were present with a lower negative charge of S-2(2-) to form weaker S-H bond strength, promoting water splitting efficiency. Moreover, the CoS2 co-catalyst that completely covered underlying Si MWs served as a passivation layer to prevent oxidation and reduce degradation during photoelectrochemical measurements. Therefore, the optimal CoS2Si electrode maintained the photocurrent at about -3 mA cm-2 (at 0 V) for 9 h, and its hydrogen generation rate was approximately 0.833 mu mol min(-1).
URI: http://dx.doi.org/10.1039/c5ta06202k
http://hdl.handle.net/11536/129441
ISSN: 2050-7488
DOI: 10.1039/c5ta06202k
期刊: JOURNAL OF MATERIALS CHEMISTRY A
Issue: 46
起始頁: 23466
結束頁: 23476
顯示於類別:期刊論文