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dc.contributor.authorFatah, Faiz Aizaden_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorLee, Tsung-Yunen_US
dc.contributor.authorYang, Kai-Chunen_US
dc.contributor.authorLiu, Ren-Xuanen_US
dc.contributor.authorChan, Jing-Rayen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2016-03-28T00:04:14Z-
dc.date.available2016-03-28T00:04:14Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0171512jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/129447-
dc.description.abstractIn this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use inhigh-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 x 10(4). The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications. (C) 2015 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titlePotential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0171512jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.issue12en_US
dc.citation.spageN157en_US
dc.citation.epageN159en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000364764700009en_US
dc.citation.woscount0en_US
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